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Asymptotic tracking of a state trajectory by output-feedback for a class of non linear systems
Vincent Andrieu
,
Laurent Praly
,
Alessandro Astolfi
Decision and Control, 2007 46th IEEE Conference on, Dec 2007, New Orleans, United States. pp.5228 - 5233, ⟨10.1109/CDC.2007.4434422⟩
Communication dans un congrès
hal-00457835v1
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Homogeneous Approximation, Recursive Observer Design, and Output Feedback
Vincent Andrieu
,
Laurent Praly
,
Alessandro Astolfi
Article dans une revue
hal-00362707v1
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Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs
Viktoryia Uhnevionak
,
Alex Burenkov
,
Christian Strenger
,
Vincent Mortet
,
Eléna Bedel-Pereira
,
et al.
Article dans une revue
hal-01921813v1
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Experimental Investigations into the Effects of Electrical Stress on Electromagnetic Emission from Integrated Circuits
Alexandre Boyer
,
Sonia Ben Dhia
,
Binhong Li
,
Nestor Berbel
,
Raul Fernandez-Garcia
Article dans une revue
hal-00937775v1
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Stability of continuous-time quantum filters with measurement imperfections
Hadis Amini
,
Clément Pellegrini
,
Pierre Rouchon
Article dans une revue
hal-01111672v1
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Global Asymptotic Stabilization for Nonminimum Phase Nonlinear Systems Admitting a Strict Normal Form
Vincent Andrieu
,
Laurent Praly
Article dans une revue
hal-00362739v1
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Characteristics of zirconium and niobium contacts on boron-doped diamond
M. Davydova
,
A. Taylor
,
P. Hubík
,
L. Fekete
,
L. Klimša
,
et al.
Article dans une revue
hal-01956850v1
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Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs
Christian Strenger
,
Viktoryia Uhnevionak
,
Vincent Mortet
,
Guillermo Ortiz
,
Tobias Erlbacher
,
et al.
Article dans une revue
hal-01921817v1
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Asymptotic tracking of a reference trajectory by output-feedback for a class of non linear systems
Vincent Andrieu
,
Laurent Praly
,
Alessandro Astolfi
Article dans une revue
hal-00413103v1
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Insight into boron-doped diamond Raman spectra characteristic features
Vincent Mortet
,
Z. Vlčková Živcová
,
A. Taylor
,
O. Frank
,
P. Hubík
,
et al.
Article dans une revue
hal-01643027v1
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Comparison of ohmic contact formation of titanium and zirconium on boron doped diamond
Vincent Mortet
,
A. Taylor
,
M. Davydova
,
L. Fekete
,
Z. Vlčková Živcová
,
et al.
Article dans une revue
hal-01956851v1
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Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect
Guillermo Ortiz
,
Vincent Mortet
,
Chrisitan Strenger
,
Viktoryia Uhnevionak
,
Alexander Burenkov
,
et al.
Article dans une revue
hal-01921388v1
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Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation
V. Mortet
,
Eléna Bedel-Pereira
,
Jean-François Bobo
,
Fuccio Cristiano
,
Christian Strenger
,
et al.
Article dans une revue
hal-01921860v1
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Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect
Guillermo Ortiz
,
Christian Strenger
,
Viktoriya Uhnevionak
,
A Burenkov
,
Anton J Bauer
,
et al.
Article dans une revue
hal-01659149v1
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Analysis of heavily boron-doped diamond Raman spectrum
V. Mortet
,
A. Taylor
,
Z. Vlčková Živcová
,
D. Machon
,
O. Frank
,
et al.
Article dans une revue
hal-01956849v1
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Effect of Bulk Potential Engineering on the Transport Properties of SiC MOSFETs: Characterization and Interpretation
Viktoryia Uhnevionak
,
Alex Burenkov
,
Christian Strenger
,
Guillermo Ortiz
,
Vincent Mortet
,
et al.
Article dans une revue
hal-01921384v1
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High gain observers with updated gain and homogeneous correction terms
Vincent Andrieu
,
Laurent Praly
,
Alessandro Astolfi
Article dans une revue
hal-00362752v1
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A unifying point of view on output feedback designs for global asymptotic stabilization
Vincent Andrieu
,
Laurent Praly
Article dans une revue
hal-00413088v1
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Le Grain et la bulle : photographies du catalogue New York USA (2002) de Dolores Marat
Muriel Adrien
Article dans une revue
hal-04410544v1
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Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets
Viktoryia Uhnevionak
,
Christian Strenger
,
Alex Burenkov
,
Vincent Mortet
,
Eléna Bedel-Pereira
,
et al.
Article dans une revue
hal-01921843v1
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Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets
Christian Strenger
,
Viktoryia Uhnevionak
,
Alex Burenkov
,
Anton J Bauer
,
Vincent Mortet
,
et al.
Article dans une revue
hal-01921853v1
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Effect of plasma composition on nanocrystalline diamond layers deposited by a microwave linear antenna plasma-enhanced chemical vapour deposition system
Andrew Taylor
,
Petr Ashcheulov
,
Martin Čada
,
Ladislav Fekete
,
Pavel Hubík
,
et al.
Article dans une revue
istex
hal-02051967v1
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Prediction of Long-Term Immunity of a Phase-Locked Loop
Alexandre Boyer
,
Sonia Ben Dhia
,
Binhong Li
,
Christophe Lemoine
,
Bertrand Vrignon
Article dans une revue
hal-00936086v1
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High-gain observer with uniform in the initial condition finite time convergence
Vincent Andrieu
,
Laurent Praly
,
Alessandro Astolfi
2009
Pré-publication, Document de travail
hal-00412585v2
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Peculiarities of high electric field conduction in p-type diamond
V. Mortet
,
David Trémouilles
,
J. Bulíř
,
P. Hubík
,
L. Heller
,
et al.
Article dans une revue
hal-01411427v1
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